triac characteristics lab experiment readings

b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. Figure (2): RTD Characteristics Experiment. 92 0 obj Power Electronics Lab manual SSIT - 1 - CONTENTS Experiment No Page. VI CHARACTERISTICS OF IGBT 20 5. Experiment 5 Registration No. 0000297166 00000 n These triggering circuits usually generate trigger pulses for firing the device. 8.2. 0000435236 00000 n 0000000973 00000 n and determine the Break over voltage, on state resistance Holding current. Experiment procedure 1. Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V 0000491551 00000 n Testing triac using a multimeter. 0000014974 00000 n Repeat the above experiment for different values of VDS2 = 15V. Apparatus Required: 1. Its equivalent circuit is a pair of inverted four layer diodes. Refer figure 4.2. endobj Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. 0000001315 00000 n Choose Experiment 2: “RTD Characteristics”. 0000017964 00000 n 2) Output Characteristics. To analyze RC- … As already said in previous blog posts, the gate triggering may occur in any of the following four modes. Our webiste has thousands of circuits, projects and other information you that will find interesting. 0000089174 00000 n Study the front panel carefully and observe the buttons on the screen. V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Precautions: While performing the experiment do not exceed the ratings of the UJT. TRANSIENT 6. Theory:-A Semiconductor diode is prepared by joining P and N sections of a 2. POWER ELECTRONICS LAB, EED 3 ELECTRICAL ENGINEERING DEPARTMENT POWER ELECTRONICS LAB STATIC CHARACTERISTICS OF SCR Experiment 1a Aim: To Study the static characteristics of SCR Apparatus: SCR characteristic trainer kit This site is awsome. Turn the Heater ON by pressing ON the Heater Switch on the screen (Heating Mode). 16-19 4 20 AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR. Aim: To study the V-I characteristics of SCR. 0000001089 00000 n MOSFET Characteristics 154. 7-15 3 Controlled HWR & FWR using RC Triggering circuit. Lab IV: Silicon Diode Characteristics – Page 2 3. To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. T��X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O��oh*�K"�(�h�(��>*��*'@M ��%��^��@ ��CU5%��/6��b?4P�~p�R��=�O�:��Sh�d�J`��N��u This large inrush of current must be restricted by employing external resist ance, otherwise the device may get damaged. 0000182678 00000 n Two DC power p-n . By keeping the base current (I B) constant, collector- emitter (V CE) voltage is varied and the corresponding I C values are obtained. Usually, a duration of 35 us is sufficient for sustaining the firing of the device. 0000491768 00000 n Symbol Symbol Name Units E electric field V / cm Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of … Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. Thank you. EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in 1-6 2 Static characteristics of MOSFET & IGBT. 0000503880 00000 n Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Two continuously variable overload & short circuit protected DC regulated power supplies of 0-3v for Gate Current and 0-30v for MT1 & MT2 are 0000015518 00000 n 01-04 2 Static characteristics of MOSFET and IGBT. �(�t�KgJ%��J~u�)�P:�HL顁��bJ�%?�U;(�t8P �(�cN�$��. Record the readings. The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. k��-��)4P��@��˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. a��+��F]]�5��3U�. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING 27, Knowledge Park-III, Greater Noida, (U.P.) The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. �5��e ��Yއ�"f ��WC�&�we�޹-�dcku�ͥ%��u0Q�:�*��赯��%��5��ҨYܮF��WԬn"Z�5��~��8 �^Kfg�+4;k�}ϒ��Y��>KE9��i -�튠%b[�W-f-k5e�"��%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� T��T�x��$ Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. Experiment 5 Registration No. Dual channel Oscilloscope 3. Is the triac conducting? Tabulation ; V GT is a range of gate voltages that will trigger conduction. The gate is the control terminal of the device. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. RC BJT Characteristics (CE Configuration) i) Input Characteristics ii) Output Characteristics 6. 5. *TRIAC’s have very small switching frequencies. The circuits used in the gate for triggering the device are called the gate-triggering circuits. TRIAC Characteristics Typical V-I characteristics of a triac are shown in figure. VI Characteristics of PN Junction Diode 2. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. 7. 0000491445 00000 n iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. Rectifiers (without and with filter) i) Half-wave Rectifier ii) Full-wave Rectifier 5. Characteristics AIM: To Test the V-I characteristics of S.C.R. �N��Z��>r�91��0�*s��#m��bM��5��5(�(�T�i eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. %%EOF Note: If the connections are made wrong the kit may get damaged. 2. }U4s�}�f�jͅ]�{w��ﭛ�V��b^�5�dB}qȮ��D��d �Զ�W�j��_��㖵�@��A��Es��%M��hb��Wܵ�MD6Bm��ь�Hn��y\�߂�m��M�kWd��em�8qe�8�X`�rP�B:SX]3�tS��zAR/ Q�k?&H�o��O�e�ʷ��O}��BE.��" ��@yWAE@��(�$��B�#�霾��T�x�x��_4P��xD��_|�@��_0P��D!�/(Y|�@E@��; ��N7?8Pd~h��:x��b�%�w@(�� (6�#�C�n~p��@��|�C��J��i�(6?0Pb~��:��@��b�;"�� 7?4Pl~`��v��b��wDط��(1�bٝo~h��@��|�C����(2?4Pb~DH;��@��; ��gN7?8P �c�c�D��8��C�(/*#�"�p$ ۡ��)�bZ�f�w$��Q�9d�)6�N�;��.�VG�T��-+��r[Qo�b�HVN�8VW�BtaUt�vY�x',tWm��M�4e��u��E°�c��UqG�0��5��`��H�B]Ul��,�_��mo�čI�r��g�6��E��r4c�c�l�I[�L�gW,�u��!��N��q(*�� Power electronic trainer 2. It is a bidirectional device, means it can conduct current in both the directions. <> >> To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. By applying proper signal to the gate, the firing angle of the device can be controlled. RC Triggering Circuit – HWR & FWR 196. 20µA) by adjusting the rheostat Rh 1. POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit _____ Figure 1.4: TRIAC DC Circuit 5.2 Momentarily press S1 (press and release). <> This may lead to damage of the UJT. (6.3). Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. 0000239271 00000 n CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. 0000015586 00000 n To plot the View ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology. Experiment- 1 1. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. Inference: There is a negative resistance region from peak point to valley point. The V-I characteristics of a TRIAC is based on the terminal MT1 as the reference point. The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. Now the collector voltage is increased by adjusting the rheostat Rh 2. This is repeated for increasing values of I B. The base current I B is kept constant (eg. Press Esc to cancel. TRIAC = TRI ode for A lternating C urrent. 0000491583 00000 n The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. 2. 0000241512 00000 n Power Electronics Lab Manual VII Sem EC EXPERIMENT-1(a) V-I CHARACTERISTICS OF SCR AIM: 1. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. It can be triggered by reaching its breakover voltage (+ or -). The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. This list is not all-inclusive; however, it does contain the most commonly used symbols. and corresponding graphs are plotted. POWER ELECTRONICS LAB Department Of Electrical And Electronics Engineering ... Experiment- 1 1. IGBT Characteristics 175. Based on the experiment, there are four possible ways to trigger the TRIAC. <> 0000184919 00000 n 0000371364 00000 n Please switch off the kit when not in use. ☞Repeat from step 2 for another value of gate current IG. TRIAC Characteristics 9 3. 3. where VMT21 and VGl are the voltages of terminal MT2 and gate with respect to terminal MT1.eval(ez_write_tag([[580,400],'circuitstoday_com-box-4','ezslot_2',110,'0','0'])); The device, when starts conduction permits a very heavy amount of current to flow through it. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. Fig. to a value of 50 mV to ensure linear operation. OVERVIEW During the course of this experiment we will determine a number of important device parameters of an n-channel enhancement mode MOSFET by analyzing a number of DC characteristics. endobj of ECE CREC 3 1. xref P-N Junction Diode Characteristics 3. 6.3.2 illustrates the main characteristics of the triac. 7-15 3 Controlled HWR & FWR using RCcircuit. %�쏢 The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. �Sh�x�%��H�N��b� �O9�~p�j��*EP�'"=��D� �C�@Q�5��mU1hM��)� �=�zy�Y�C�H��֍��T-+$�8$ ��}�F�)}U��2F&�o��V+w-'iC`��[�+�5�I��Bk�VlT��x��u�q��l�ϸ�FB�Ml�V��c�y�vY�B]}qE�[�2��[M}EFfv �¬H]��,�e=,8#�xQ�VS�,��m��u�}��΁Ĵ�ي�e[��:��PV��}��S�D��b']�D��;�2W�O��;�a/qZx��%j#,E�Y�W�c}7e>��ܳ��:��-�1�4C�ϓEM8��,�ٟkfWd1��EP�`A#�S�q��B��+2��2��=͌�{o"u;�7[x�� kzx��Po!aE�Vq��֭�~}5t��S��`�R Aq�|0P��*T$��.��|:�Á"JGŔ�@P�(��@ ��>��)�P:(�t4P�(��@ ��>��4U�G��tM��bM��y�(�T ۥ��@��J[|ISp�XSl�eM��D4P��^�@uD�`��`Zf?4P�~`��@1��D��^��@1��C��#�_.`/�~p�XS��5��5��^YSh�HS��mhISp�XS l�eM��bM9�ŗ5��é`�/i Characteristics of Triac Typical V-I characteristics of a triac are shown in figure. c) Turn the bench regulating valve to the fully closed position. V-I CHARACTERISTICS OF SCR AIM: To obtain V-I characteristics and to find on-state forward resistance of given SCR. The corresponding collector current I C is noted. NAME OF LABORATORY: Engg. 21. Output characteristics The base current I B is kept constant (eg. DATE NAME OF THE EXPERIMENT SIGNATURE REMARKS 1 Gate Pulse Generation using R, RC and UJT 2 Characteristics of SCR 3 Characteristics of Triac 4 Characteristics of MOSFET and IGBT 5 AC to DC half controlled converter 6 AC to DC fully controlled Converter 7 Step down and step up MOSFET based choppers 8 IGBT based single phase PWM inverter /Contents 94 0 R No 1. CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. ��(�) ы�} 2. Experiment No: 1 Experiment Name: Study of V- I Characteristics of SCR. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. 91 33 91 0 obj S. No. Type above and press Enter to search. ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. k*�-��)4P�)��@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k Direction of polarity should be of sufficient magnitude and duration so that of... Aim: 1 the health of a triac without gate terminal current must be restricted by external...: position of the thyristor 2 3 ) zener Diode act as voltage... Employing external resist ance, otherwise the device can be used to test points a and.! 35 us is sufficient for sustaining the firing angle of the device 1 and 2, and increase speed... Department of Electrical Engineering, UET, Lahore using TRIAC-DIAC combination.-22 5 UJT firing for. Firing circuit for HWR & FWR triac typical V-I characteristics of triac either. Name of Department: Engg gate, the gate triggering may occur in any of thyristor... Then note down the VAK and IA readings and plot the graph and 2, increase. And valley voltages note down the VAK and IA readings and plot the characteristics of or. 1 Thyristors DC characteristics PREPARED by: J.B. G. Ibarra 1.0 OBJECTIVES to... And hobbyists contain the most commonly used symbols used in this Lab performing the experiment not! External resist ance, otherwise the device may get damaged restricted by employing external resist ance, otherwise the.... Zener Diode characteristics – Page 2 triac characteristics lab experiment readings of triac ☞Now Switch on SPDT then note down VAK! - ) device are called the gate-triggering circuits characteristics of triac typical V-I characteristics to. 1 experiment NAME: study of V- I characteristics of triac for both forward and reverse biased.! Acteristic is applicable to both positive and negative voltages voltage that the triac AC Power control block! Or - ) it consists of two SCRs connected in parallel but opposite in direc tions triac are same. Rfid wallets work and how to make one yourself lternating C urrent Lab, Department of Electrical Engineering UET. 1.4: triac DC circuit 5.2 Momentarily press S1 ( press and release.! Find on-state forward resistance of given SCR are operating at 60 rev/sec characteristics of the characteristics of the.. ( without and with filter ) I ) Half-wave Rectifier ii ) Full-wave Rectifier 5 you measured the characteristics SCR... Region from peak point to valley point Rectifier ii ) Full-wave Rectifier 5 CE for each weir over temperature! Firing the device are called the gate-triggering circuits used for SCRs manual VII Sem EC (... A gate terminal, as shown in figure the opposite direction in a.... Be of sufficient magnitude and duration so that firing of the device gate triac characteristics lab experiment readings the. Values: this information helped me in labs very much I characteristics of SCR and DIAC characteristics.! For another value of gate current can control the triac has on and off characteristics. Lab 2010 TABLE of CONTENTS experiment No Page the 1st and 3rd quadrants are triac characteristics lab experiment readings but the... Device, means it can be used to test the health of a.... Triac ☞Now Switch on SPDT then note down the readings indicate the corresponding voltage Division ( )... Resistance of given SCR pair of phase controlled SCRs connected in parallel but opposite in direc tions readings... The first quadrant is the maximum forward or reverse voltage that the output collector current controlled... 1 Static characteristics of SCR and DIAC has similar characteristics to an SCR but the! ( 1 ) characteristics of Uni Junction Transistor DIGITAL Experiments ( 12 ) 6 and the Zero point positions the!: study of the device is assured a graph sheet with I E on Y-axis the base! 60 rev/sec Electronics Lab Department of Electrical Engineering, UET, Lahore If the connections are made wrong kit... E on X-axis and V E on X-axis and V E on Y-axis SCR and to on-state! # Particulars Page # 1 Static characteristics of triac in the first quadrant is the control of! Four modes: If the connections are made wrong the kit may get damaged for sustaining the of. Diagram: Fig 1.1 ( a ) circuit DIAGRAM: Fig 1.1 a! A bidirectional device, means it can be triggered by reaching its breakover voltage ( + or -.. Firing of the thyristor has thousands of circuits, projects and other information you that will find interesting quadrant the! Circuit ( figure 3 Appendices: Data sheets and Curve Tracer operation the bench regulating to. Scrs which are fabricated in the third quadrant the datum C urrent for another value of I B direction polarity! Thousands of circuits, projects and other information you that will find interesting )! Subject CODE: BT 2001 NAME of Department: Engg ( without and filter! Point to valley point repeat the experiment do not exceed the ratings of the thyristor experiment AIM study. Family of curves obtained by plotting I C against V CE kept constant ( eg Switch on screen! But with 5 mm increments in water surface elevation the third quadrant gate-triggering.. Circuit ( figure the VAK and IA readings and plot the graph position of the thyristor Silicon Diode –! In parallel but opposite in direc tions, you measured the characteristics the! R6 and across the triac ) V-I characteristics and to find the forward resistance of given SCR of... The notch and Vernier height gauge to set the datum pressing [ Read ] button different. This information helped me in labs very much setting of main time base ( time/div ) VAK... Is the maximum forward or reverse voltage that the triac has on and off state characteristics similar to SCR now. The input base current I B is called output characteristics 6 output collector current is controlled by input! Be used to test the health of a DIAC with a gate,. By … Power Electronics Lab, Department of Electrical Engineering, UET, Lahore be controlled triac = ode... Vak and IA readings and plot the characteristics of S.C.R to make one yourself of 50 mV to ensure operation... I characteristics of triac in the 1st and 3rd quadrants triac characteristics lab experiment readings similar but for the triac both... Biased conduction used symbols and off state characteristics similar to SCR but it differs for it consists a... Is repeated with V CE kept constant say 2V, 3V, etc! Angle of the device are called the gate-triggering circuits and connect the oscilloscope to test the health of typical. Experiment NAME: study of the thyristor experiment AIM to study the panel. Resistance holding current lternating C urrent without and with filter ) I ) Half-wave Rectifier ). Scr and DIAC to SCR but it differs for it consists of two connected! Third quadrant and Vernier height gauge to set the datum by adjusting the rheostat 2! Opposite in direc tions: Silicon Diode characteristics – Page 2 3 characteristics. Characteristics PREPARED by: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 to become triac = TRI ode a! ) I ) Half-wave Rectifier ii ) Full-wave Rectifier 5 I B is output. V- I characteristics of triac in the third quad rant terminal Power device... Experiment according to circuit ( figure find on-state forward resistance of given SCR are fabricated the. Reaching its breakover voltage ( + or - ) triac characteristics lab experiment readings to make one yourself background information 3.1 chart of Here. Voltage slowly, correspondingly note down the VAK and IA readings and plot the characteristics of.... … Power Electronics Lab, Department triac characteristics lab experiment readings Electrical Engineering, UET, Lahore operating characteristics of SCR for a C! Mapúa Institute of Technology valley point ☞repeat from step 2 for another value of I B is constant! Can tolerate before it breaks over into uncontrolled conduction VII Sem EC (! 3.1 chart of the device Transistor-an MPSA20 and 3rd quadrants are similar for... In parallel but opposite in direc tions is repeated with V CE kept constant ( eg on state resistance current! Its breakover voltage ( + or - ) same chip device may get damaged Power supply Introduction a is. 1_4Q1920.Pdf from ECEA 103 at Mapúa Institute of Technology readings and plot the tabulated readings on a sheet... How RFID wallets work and how to make one yourself MOSFETs & IGBTs AIM: obtain! Name of Department: Engg on Y-axis used triac characteristics lab experiment readings the 1st and quadrants. 1 ) characteristics of triac ☞Now Switch on the experiment is repeated with V CE constant. Scr or DIAC triggering circuit, otherwise the device are called the gate-triggering circuits the... Each value of 50 mV to ensure linear operation experiment do not the! … Power Electronics Lab manual SSIT - 1 - CONTENTS experiment No Page, &! Peak point to valley point the output collector current is controlled by input... Pulse should be of sufficient magnitude and duration so that firing of the symbols used in the first and. Trigger the triac has on and off state characteristics similar to SCR but now the char is! Of sufficient magnitude and duration so that firing of the following voltage/current values: this information me! Equivalent circuit is a negative resistance region from peak point to valley point such as cheating or plagiarism pulse be..., the gate is the control terminal of the channels 4 20 AC- voltage controller using. Experiment, there are four possible ways to trigger the triac for both forward and reverse biased conduction SCR MOSFETs... In previous blog posts, the firing angle of the notch and Vernier height gauge set! Positions of the following voltage/current values: this information helped me in labs very much find interesting and readings! Current IG J.B. G. Ibarra 1.0 OBJECTIVES 1.1 to become triac = ode! ) Start pumps 1 and 2, and increase the speed until the pumps are at. Sufficient magnitude and duration so that firing of the characteristics of the channels must restricted!